Flexible Electronics News

Imec Demonstrates 20nm Pitch Line/Space Resist Imaging with High-NA EUV Interference Lithography

The achievement marks a major milestone of imec and KMLabs’ AttoLab.

Author Image

By: Anthony Locicero

Copy editor, New York Post

Imec reported for the first time the use of a 13.5 nm High Harmonic Generation source for the printing of 20nm pitch line/spaces using interference lithographic imaging of an Inpria metal-oxide resist under high-numerical-aperture (high-NA) conditions.    The demonstrated high-NA capability of the EUV interference lithography using this EUV source presents an important milestone of the AttoLab, a research facility initiated by imec and KMLabs to accelerate the development of the high-NA patt...

Continue reading this story and get 24/7 access to Ink World magazine for FREE


Already a subscriber? Sign in

Keep Up With Our Content. Subscribe To Ink World magazine Newsletters